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FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 95 mOhm @ 14A, 10V |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25° C | 24A |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) @ Vgs | 45nC @ 10V |
Input Capacitance (Ciss) @ Vds | 890pF @ 25V |
Power - Max | 140W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Корпус | D-Pak |
IRFR24N15D (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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ADG512BRZ-REEL7 | Analog Devices Inc | |||||||
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