FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | UltraFET™ |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 29A, 10V |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 29A |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) @ Vgs | 28nC @ 10V |
Input Capacitance (Ciss) @ Vds | 900pF @ 25V |
Power - Max | 75W |
Тип монтажа | Выводной |
Корпус (размер) | TO-220-3 |
Корпус | TO-220AB |
HUF76419P3 (MOSFET) 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Производитель:
|
|