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Серия | SuperMESH™ |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 1.35 Ohm @ 3.6A, 10V |
Drain to Source Voltage (Vdss) | 950V |
Current - Continuous Drain (Id) @ 25° C | 7.2A |
Vgs(th) (Max) @ Id | 5V @ 100µA |
Gate Charge (Qg) @ Vgs | 34nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1031pF @ 100V |
Power - Max | 150W |
Тип монтажа | Выводной |
Корпус (размер) | TO-247-3 |
Корпус | TO-247-3 |
STW7N95K3 (MOSFET) N-channel 950 V, 1.1 ?, 7.2 A, TO-247 Zener-protected SuperMESH3™ Power MOSFET
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
LM317 SOT-223 | UTC | |||||||
LM317 SOT-223 | ||||||||
MJD122T4 | ST MICROELECTRONICS | |||||||
MJD122T4 | ON SEMICONDUCTOR | |||||||
MJD122T4 | MOTOROLA | |||||||
MJD122T4 | 1 434 | 55.28 | ||||||
MJD122T4 | ST MICROELECTRONICS SEMI | 29 | ||||||
MJD122T4 | STMicroelectronics | 15 992 | 57.66 | |||||
MJD122T4 | ST MICROELECTRO | |||||||
MJD122T4 | <> | |||||||
MMSZ20T1G | ONS | |||||||
MMSZ20T1G | ON Semiconductor | |||||||
MMSZ20T1G | ON SEMICONDUCTOR | 7 975 | ||||||
MMSZ20T1G | ||||||||
MMSZ5V6T1G | Стабилитрон (P=500mW, Vz=5.6V, Izt=5mA, 5%) | 67 | 15.60 | |||||
MMSZ5V6T1G | Стабилитрон (P=500mW, Vz=5.6V, Izt=5mA, 5%) | ON SEMICONDUCTOR | ||||||
MMSZ5V6T1G | Стабилитрон (P=500mW, Vz=5.6V, Izt=5mA, 5%) | ON SEMICONDUCTOR | 13 345 | |||||
MMSZ5V6T1G | Стабилитрон (P=500mW, Vz=5.6V, Izt=5mA, 5%) | ONS | ||||||
TL2844D | Texas Instruments | |||||||
TL2844D | TEXAS INSTRUMENTS | |||||||
TL2844D |
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