FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 435 mOhm @ 4.8A, 10V |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25° C | 8A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 34nC @ 10V |
Input Capacitance (Ciss) @ Vds | 620pF @ 25V |
Power - Max | 3.8W |
Тип монтажа | Выводной |
Корпус (размер) | TO-220-3 |
Корпус | TO-220AB |
IRF634NPBF (MOSFET) HEXFET® Power MOSFET
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