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FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 57.5 mOhm @ 3.1A, 10V |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 5.1A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 14nC @ 10V |
Input Capacitance (Ciss) @ Vds | 340pF @ 25V |
Power - Max | 1W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-261-4, TO-261AA |
Корпус | SOT-223 |
IRFL024Z (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
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