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FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Rds On (Max) @ Id, Vgs | 6 mOhm @ 21A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 105A |
Vgs(th) (Max) @ Id | 2.25V @ 250µA |
Gate Charge (Qg) @ Vgs | 35nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 2840pF @ 15V |
Power - Max | 110W |
Тип монтажа | Выводной |
Корпус (размер) | TO-220-3 |
Корпус | TO-220AB |
IRL8113 (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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Корзина
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