NTMS10P02R2
Power mosfet ?10 amps, ?20 volts p?channel enhancement?mode single soic?8 package
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Версия для печати
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| FET Type | MOSFET P-Channel, Metal Oxide |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 14 mOhm @ 10A, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 8.8A |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Gate Charge (Qg) @ Vgs | 70nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 3640pF @ 16V |
| Power - Max | 1.6W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
| Product Change Notification | Wire Change 20/Aug/2008 Discontinuance 11/Feb/2009 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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NTMS10P02R2 (MOSFET) Power MOSFET ?10 Amps, ?20 Volts P?Channel Enhancement?Mode Single SOIC?8 Package
Производитель:
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