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MOSFET N-CH 200V 9.4A DPAK |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | HEXFET® |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 5.6A, 10V |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 9.4A |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) @ Vgs | 27nC @ 10V |
Input Capacitance (Ciss) @ Vds | 560pF @ 25V |
Power - Max | 86W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Корпус | D-Pak |
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Корзина
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