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Drain to Source Voltage (Vdss) | 60V |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 3.44A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET P-Channel, Metal Oxide |
Серия | SIPMOS® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Current - Continuous Drain (Id) @ 25° C | 3.44A |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) @ Vgs | 30nC @ 10V |
Input Capacitance (Ciss) @ Vds | 875pF @ 25V |
Power - Max | 2.5W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | PG-DSO-8 |
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Корзина
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