Drain to Source Voltage (Vdss) | 650V |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 2A, 10V |
FET Feature | Standard |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | CoolMOS™ |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Current - Continuous Drain (Id) @ 25° C | 700mA |
Vgs(th) (Max) @ Id | 3.9V @ 135µA |
Gate Charge (Qg) @ Vgs | 17nC @ 10V |
Input Capacitance (Ciss) @ Vds | 400pF @ 25V |
Power - Max | 1.8W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-261-4, TO-261AA |
Корпус | PG-SOT223-4 |
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