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Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Серия | SuperMESH™ |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 4.8 Ohm @ 1.5A, 10V |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25° C | 3A |
Vgs(th) (Max) @ Id | 4.5V @ 50µA |
Gate Charge (Qg) @ Vgs | 22.7nC @ 10V |
Input Capacitance (Ciss) @ Vds | 590pF @ 25V |
Power - Max | 90W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Корпус | D-Pak |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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2SK3567 |
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Транзистор полевой N-канальный MOSFET (600V, 3.5A, 35W) | TOSHIBA |
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2SK3567 |
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Транзистор полевой N-канальный MOSFET (600V, 3.5A, 35W) | TOS |
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2SK3567 |
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Транзистор полевой N-канальный MOSFET (600V, 3.5A, 35W) | 2 | 140.40 | |||
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2SK3567 |
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Транзистор полевой N-канальный MOSFET (600V, 3.5A, 35W) | FAIR |
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2SK3567 |
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Транзистор полевой N-канальный MOSFET (600V, 3.5A, 35W) | TOSHIBA | 180 |
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ICE2PCS01GXT | INFINEON |
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ICE2PCS01GXT |
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IKW50N60T |
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Infineon Technologies |
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IKW50N60T |
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INFINEON |
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IKW50N60T |
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NCP1200P60G | ON SEMICONDUCTOR |
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NCP1200P60G | ONS |
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NCP1200P60G |
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196.00 | |||||
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NCP1200P60G | КИТАЙ |
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NCP1200P60G | ON SEMICONDUCTOR |
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NCP1200P60G | ON SEMICONDUCTO |
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SS8050 |
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Транзистор NPN 25V, 1.5A, 1W, 190MHz | SAMSUNG |
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SS8050 |
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Транзистор NPN 25V, 1.5A, 1W, 190MHz | 33 818 | 1.02 | ||
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SS8050 |
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Транзистор NPN 25V, 1.5A, 1W, 190MHz | CJ | 792 | 3.94 | |
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SS8050 |
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Транзистор NPN 25V, 1.5A, 1W, 190MHz | YJ |
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SS8050 |
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Транзистор NPN 25V, 1.5A, 1W, 190MHz | HOTTECH | 12 800 | 1.87 |
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Корзина
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