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Drain to Source Voltage (Vdss) | 200V |
Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 660mA, 10v |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | SIPMOS® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Current - Continuous Drain (Id) @ 25° C | 660mA |
Vgs(th) (Max) @ Id | 1.8V @ 400µA |
Gate Charge (Qg) @ Vgs | 16.1nC @ 10V |
Input Capacitance (Ciss) @ Vds | 357pF @ 25V |
Power - Max | 1.8W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-261-4, TO-261AA |
Корпус | PG-SOT223-4 |
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Корзина
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