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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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IS61WV25616BLL-10TLI |
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ISSI
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IS61WV25616BLL-10TLI |
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4-7 НЕДЕЛЬ
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506
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CY6264-70SNXC |
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CY6264-70SNXC |
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CYPRESS
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CY6264-70SNXC |
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CYPRESS
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CY6264-70SNXC |
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Cypress Semiconductor Corp
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CY6264-70SNXC |
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4-7 НЕДЕЛЬ
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342
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24C02C/P(TSTDTS) |
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MICRO CHIP
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24LC256-I/SN |
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SO8
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MICRO CHIP
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423
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52.50
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24LC256-I/SN |
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SO8
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131.08
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24LC256-I/SN |
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SO8
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MICRO CHIP
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24LC256-I/SN |
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SO8
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Microchip Technology
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24LC256-I/SN |
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SO8
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ТАЙВАНЬ (КИТАЙ)
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24LC256-I/SN |
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SO8
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ТАЙВАНЬ(КИТАЙ)
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24LC256-I/SN |
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SO8
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4-7 НЕДЕЛЬ
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220
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25LC080-I/SN |
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Последовательная память EEPROM (8K,512x8 bit, 10 M циклов, SPI interface, 2.0MHz@5V, ...
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MICRO CHIP
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25LC080-I/SN |
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Последовательная память EEPROM (8K,512x8 bit, 10 M циклов, SPI interface, 2.0MHz@5V, ...
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Microchip Technology
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93LC86C-I/P |
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Память EEPROM serial Microwire 16K
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MICRO CHIP
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240
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86.61
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93LC86C-I/P |
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Память EEPROM serial Microwire 16K
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6
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136.08
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93LC86C-I/P |
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Память EEPROM serial Microwire 16K
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Microchip Technology
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93LC86C-I/P |
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Память EEPROM serial Microwire 16K
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США
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93LC86C-I/P |
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Память EEPROM serial Microwire 16K
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СОЕДИНЕННЫЕ ШТА
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93LC86C-I/P |
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Память EEPROM serial Microwire 16K
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1
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93LC86C-I/P |
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Память EEPROM serial Microwire 16K
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4-7 НЕДЕЛЬ
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671
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AT24C256B-PU |
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EEPROM ser 2-Wire 32Kx8 -40+85C
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ATMEL
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AT24C256B-PU |
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EEPROM ser 2-Wire 32Kx8 -40+85C
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107.44
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AT24C256B-PU |
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EEPROM ser 2-Wire 32Kx8 -40+85C
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ATMEL CORPORATION
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AT24C256B-PU |
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EEPROM ser 2-Wire 32Kx8 -40+85C
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4-7 НЕДЕЛЬ
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192
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AT29C256-90JC |
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ATMEL
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AT29C256-90JC |
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ATMEL CORPORATION
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CY62177DV30LL-55BAXI |
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CYPRESS
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CY62177DV30LL-55BAXI |
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Cypress Semiconductor Corp
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CY62177DV30LL-55BAXI |
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CYPRESS
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CY62177DV30LL-55BAXI |
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4
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CY7C1021CV33-12VC |
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CYPRESS
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CY7C1021CV33-12VC |
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CYPRESS
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20
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CY7C1021CV33-12VC |
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Cypress Semiconductor Corp
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K6R4016V1D-UI10T00 |
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SAMSUNG
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M27C4001-10F1 |
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Память ПЗУ с УФ-стиранием (512K x 8bit, 100ns, Vcc=4.5-5.5V, Vpp=12.5-13V, 0 to +70C)
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ST MICROELECTRONICS
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M27C4001-10F1 |
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Память ПЗУ с УФ-стиранием (512K x 8bit, 100ns, Vcc=4.5-5.5V, Vpp=12.5-13V, 0 to +70C)
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ST MICROELECTRONICS SEMI
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M27C4001-10F1 |
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Память ПЗУ с УФ-стиранием (512K x 8bit, 100ns, Vcc=4.5-5.5V, Vpp=12.5-13V, 0 to +70C)
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175
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462.50
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M27C4001-10F1 |
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Память ПЗУ с УФ-стиранием (512K x 8bit, 100ns, Vcc=4.5-5.5V, Vpp=12.5-13V, 0 to +70C)
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ST1
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M27C4001-10F1 |
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Память ПЗУ с УФ-стиранием (512K x 8bit, 100ns, Vcc=4.5-5.5V, Vpp=12.5-13V, 0 to +70C)
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STMicroelectronics
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M27C4001-10F1 |
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Память ПЗУ с УФ-стиранием (512K x 8bit, 100ns, Vcc=4.5-5.5V, Vpp=12.5-13V, 0 to +70C)
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ST MICROELECTR
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M27C4001-10F1 |
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Память ПЗУ с УФ-стиранием (512K x 8bit, 100ns, Vcc=4.5-5.5V, Vpp=12.5-13V, 0 to +70C)
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СИНГАПУР
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M27C4001-10F1 |
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Память ПЗУ с УФ-стиранием (512K x 8bit, 100ns, Vcc=4.5-5.5V, Vpp=12.5-13V, 0 to +70C)
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SGS THOMSON
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M27C4001-10F1 |
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Память ПЗУ с УФ-стиранием (512K x 8bit, 100ns, Vcc=4.5-5.5V, Vpp=12.5-13V, 0 to +70C)
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ST MICROELECTRO
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M27C4001-10F1 |
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Память ПЗУ с УФ-стиранием (512K x 8bit, 100ns, Vcc=4.5-5.5V, Vpp=12.5-13V, 0 to +70C)
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4-7 НЕДЕЛЬ
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512
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BR24L04FJ-WE2 |
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ROHM
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BR24L04FJ-WE2 |
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20.00
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