| |
|
Наименование
|
|
Описание
|
Производитель
|
Количество
|
Цена, руб.
|
Купить
|
 |
|
MMBV109LT3 |
|
|
ON Semiconductor
|
|
|
|
|
|
|
MMBV109LT3G |
|
|
ON Semiconductor
|
|
|
|
|
|
 |
MMBV2107LT1 |
|
|
ON Semiconductor
|
|
|
|
|
|
|
MMBV2107LT1G |
|
|
ON Semiconductor
|
|
|
|
|
|
|
MMBV2108LT1G |
|
|
ON Semiconductor
|
|
|
|
|
|
|
MMBV409LT1G |
|
|
ON Semiconductor
|
|
|
|
|
|
|
MMBV809LT3G |
|
|
ON Semiconductor
|
|
|
|
|
|
|
MMVL109T1G |
|
|
ON Semiconductor
|
|
|
|
|
|
|
MMVL2101T1G |
|
|
ON Semiconductor
|
|
|
|
|
|
|
MMVL3102T1G |
|
|
ON Semiconductor
|
|
|
|
|
|
|
MMVL409T1G |
|
|
ON Semiconductor
|
|
|
|
|
|
|
MMVL809T1G |
|
|
ON Semiconductor
|
|
|
|
|
|
|
MV104RLRAG |
|
|
ON Semiconductor
|
|
|
|
|
|
|
MV209RLRA |
|
|
ON Semiconductor
|
|
|
|
|
|
|
MV2101G |
|
|
ON Semiconductor
|
|
|
|
|
|
|
MV2109RLRAG |
|
|
ON Semiconductor
|
|
|
|
|
|
|
BB 857 E7902 |
|
|
Infineon Technologies
|
|
|
|
|
|
|
BB 555-02V E7912 |
|
|
Infineon Technologies
|
|
|
|
|
|
|
BBY 66-02V E6327 |
|
|
Infineon Technologies
|
|
|
|
|
|
|
QM75DY-2H |
|
Транзистор биполярный
|
|
|
12 600.00
|
|
|
|
|
QM75DY-2H |
|
Транзистор биполярный
|
MITSUBISHI
|
|
|
|
|
|
|
QM75DY-2H |
|
Транзистор биполярный
|
MIT
|
|
|
|
|
|
|
QM75DY-2H |
|
Транзистор биполярный
|
MITSUBISHI EL-C. JAPAN
|
|
|
|
|
|
|
2ED020I12F |
|
|
|
|
822.36
|
|
|
|
|
2ED300C17 |
|
|
|
|
37 992.92
|
|
|
|
|
2N2894 |
|
Транзистор биполярный малой мощности
|
|
|
7.60
|
|
|
|
|
2N2894 |
|
Транзистор биполярный малой мощности
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
2N2906 |
|
Транзистор биполярный малой мощности
|
|
|
5.44
|
|
|
|
|
2N3420 |
|
|
|
|
120.00
|
|
|
|
|
2N3822 |
|
Транзистор биполярный большой мощности
|
|
|
25.32
|
|
|
|
|
2N3822 |
|
Транзистор биполярный большой мощности
|
INTERSIL
|
|
|
|
|
|
|
2N3866 |
|
Транзистор биполярный большой мощности
|
ST MICROELECTRONICS
|
|
|
|
|
|
|
2N3866 |
|
Транзистор биполярный большой мощности
|
FAIR
|
|
|
|
|
|
|
2N3866 |
|
Транзистор биполярный большой мощности
|
|
1
|
280.00
|
|
|
|
|
2N3866 |
|
Транзистор биполярный большой мощности
|
ST MICROELECTRONICS SEMI
|
|
|
|
|
|
|
2N3866 |
|
Транзистор биполярный большой мощности
|
CENTRAL SEMI
|
|
|
|
|
|
|
2N3866 |
|
Транзистор биполярный большой мощности
|
CENTRAL SEMICONDUCTOR CORP
|
|
|
|
|
|
|
2N4091 |
|
Транзистор биполярный малой мощности
|
|
|
6.32
|
|
|
|
|
2N5239 |
|
Транзистор биполярный средней мощности
|
|
|
215.24
|
|
|
|
|
2N613 |
|
Транзистор биполярный
|
|
|
5.08
|
|
|
|
|
2SA1220A |
|
Биполярный транзистор PNP 160V, 1.2A, 10W, 175MHz
|
|
|
20.64
|
|
|
|
|
2SA1220A |
|
Биполярный транзистор PNP 160V, 1.2A, 10W, 175MHz
|
NEC
|
|
|
|
|
|
|
2SA1265N |
|
Биполярный транзистор PNP Hi-Fi, 140V, 10A, 100W, 30MHz (Comp. 2SC3182)
|
TOSHIBA
|
|
|
|
|
|
|
2SA1265N |
|
Биполярный транзистор PNP Hi-Fi, 140V, 10A, 100W, 30MHz (Comp. 2SC3182)
|
TOS
|
|
|
|
|
|
|
2SA1265N |
|
Биполярный транзистор PNP Hi-Fi, 140V, 10A, 100W, 30MHz (Comp. 2SC3182)
|
|
|
87.12
|
|
|
|
|
2SA1265N |
|
Биполярный транзистор PNP Hi-Fi, 140V, 10A, 100W, 30MHz (Comp. 2SC3182)
|
КИТАЙ
|
|
|
|
|
|
|
2SA1266Y |
|
Биполярный транзистор
|
|
|
4.48
|
|
|
|
|
2SA1939 |
|
Биполярный транзистор
|
|
|
189.92
|
|
|
|
|
2SA1939 |
|
Биполярный транзистор
|
TOSHIBA
|
|
|
|
|
|
|
2SB1095 |
|
Биполярный транзистор
|
|
|
405.12
|
|
