|
|
Наименование
|
|
Описание
|
Производитель
|
Количество
|
Цена, руб.
|
Купить
|
|
|
STP6NK60ZFP |
|
MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
|
|
900
|
47.72
|
|
|
|
STP6NK60ZFP |
|
MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
|
ST MICROELECTRONICS
|
|
|
|
|
|
STP6NK60ZFP |
|
MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
|
STMicroelectronics
|
|
|
|
|
|
STP6NK60ZFP |
|
MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
|
ST MICROELECTR
|
|
|
|
|
|
STP6NK60ZFP |
|
MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
|
КИТАЙ
|
|
|
|
|
|
STP6NK60ZFP |
|
MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
|
ST MICROELECTRONICS SEMI
|
|
|
|
|
|
STP6NK60ZFP |
|
MOSFET силовой транзистор N, Uси: 600 В, Iс(25°C): 6 А, Rси(вкл): 1 Ом, Uзатв(ном): 10 ...
|
ST MICROELECTRO
|
|
|
|
|
|
SPB03N60C3 |
|
|
|
|
280.00
|
|
|
|
SPB03N60C3 |
|
|
Infineon Technologies
|
|
|
|
|
|
FCP16N60N |
|
N-channel mosfet 600v, 16a, 0.170w
|
FSC
|
|
|
|
|
|
FCP16N60N |
|
N-channel mosfet 600v, 16a, 0.170w
|
Fairchild Semiconductor
|
|
|
|
|
|
FCP16N60N |
|
N-channel mosfet 600v, 16a, 0.170w
|
|
|
|
|
|
|
FCP16N60N |
|
N-channel mosfet 600v, 16a, 0.170w
|
FAIRCHILD
|
|
|
|
|
|
FCP16N60N |
|
N-channel mosfet 600v, 16a, 0.170w
|
FAIRCHILD
|
|
|
|
|
|
FCP16N60N |
|
N-channel mosfet 600v, 16a, 0.170w
|
ONS
|
|
|
|
|
|
IRFIB6N60APBF |
|
Hexfet® power mosfet
|
VISHAY
|
|
|
|
|
|
IRFIB6N60APBF |
|
Hexfet® power mosfet
|
Vishay/Siliconix
|
|
|
|
|
|
IRFIB6N60APBF |
|
Hexfet® power mosfet
|
VISHAY/IR
|
|
|
|
|
|
IRFIB6N60APBF |
|
Hexfet® power mosfet
|
|
|
|
|
|
|
IRLR7821 |
|
Hexfet power mosfets discrete n-channel
|
INTERNATIONAL RECTIFIER
|
|
|
|
|
|
IRLR7821 |
|
Hexfet power mosfets discrete n-channel
|
|
|
172.00
|
|
|
|
IRLR7821 |
|
Hexfet power mosfets discrete n-channel
|
INFINEON
|
|
|
|
|
|
2N7002LT1G |
|
Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
|
ON SEMICONDUCTOR
|
|
|
|
|
|
2N7002LT1G |
|
Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
|
ON SEMICONDUCTOR
|
2 533
|
|
|
|
|
2N7002LT1G |
|
Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
|
ONS-FAIR
|
|
|
|
|
|
2N7002LT1G |
|
Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
|
|
|
4.00
|
|
|
|
2N7002LT1G |
|
Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
|
ONS
|
|
|
|
|
|
2N7002LT1G |
|
Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
|
ON SEMIC
|
|
|
|
|
|
2N7002LT1G |
|
Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
|
ON SEMICONDUCTO
|
|
|
|
|
|
2N7002LT1G |
|
Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
|
ONSEMICONDUCTOR
|
|
|
|
|
|
2N7002LT1G |
|
Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
|
LRC
|
|
|
|
|
|
2N7002LT1G |
|
Транзистор полевой N-канальный (Vds=60V, Id=0.115A@T=25C, Id=0.075A@T=100C, Rds)
|
VBSEMI
|
7 043
|
4.01
|
|
|
|
2N7002MTF |
|
N-channel small signal mosfet
|
FAIR
|
|
|
|
|
|
2N7002MTF |
|
N-channel small signal mosfet
|
Fairchild Semiconductor
|
|
|
|
|
|
2N7002MTF |
|
N-channel small signal mosfet
|
FAIRCHILD
|
|
|
|
|
|
2SJ352 |
|
Биполярный транзистор P-MOS 200V, 8A, 100W (Comp. 2SK2221)
|
HITACHI
|
|
|
|
|
|
2SJ352 |
|
Биполярный транзистор P-MOS 200V, 8A, 100W (Comp. 2SK2221)
|
HITACHI SEMICONDUCTOR
|
|
|
|
|
|
2SJ352 |
|
Биполярный транзистор P-MOS 200V, 8A, 100W (Comp. 2SK2221)
|
|
|
491.16
|
|
|
|
2SJ352 |
|
Биполярный транзистор P-MOS 200V, 8A, 100W (Comp. 2SK2221)
|
RENESAS
|
|
|
|
|
|
AO4407 |
|
|
ALPHA & OMEGA SEMICONDUCTOR
|
|
|
|
|
|
AO4407 |
|
|
ALPHA & OMEGA SEMICONDUCTOR
|
4 336
|
|
|
|
|
AO4407 |
|
|
|
|
|
|
|
|
BSL211SP |
|
|
INFINEON
|
|
|
|
|
|
BSL211SP |
|
|
INFINEON
|
|
|
|
|
|
BSL211SP |
|
|
Infineon Technologies
|
|
|
|
|
|
BSS138 |
|
N-канальный Полевой транзистор (Vds=50V, Id=0.20A@T=25C, Rds=5.6 Ohm (typ), P=225mW, ...
|
|
80 888
|
1.15
|
|
|
|
BSS138 |
|
N-канальный Полевой транзистор (Vds=50V, Id=0.20A@T=25C, Rds=5.6 Ohm (typ), P=225mW, ...
|
FAIR
|
|
|
|
|
|
BSS138 |
|
N-канальный Полевой транзистор (Vds=50V, Id=0.20A@T=25C, Rds=5.6 Ohm (typ), P=225mW, ...
|
ON SEMICONDUCTOR
|
|
|
|
|
|
BSS138 |
|
N-канальный Полевой транзистор (Vds=50V, Id=0.20A@T=25C, Rds=5.6 Ohm (typ), P=225mW, ...
|
UTC
|
|
|
|
|
|
BSS138 |
|
N-канальный Полевой транзистор (Vds=50V, Id=0.20A@T=25C, Rds=5.6 Ohm (typ), P=225mW, ...
|
INFINEON
|
|
|
|