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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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SUNTAN
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236 315
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1.62
>100 шт. 0.81
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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PHILIPS SEMIC
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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КИТАЙ
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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INFINEON TECH
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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DIODES INC
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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110 397
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1.36
>100 шт. 0.68
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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KINGTRON
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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GALAXY ME
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646
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1.13
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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HOTTECH
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217 954
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1.52
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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LRC
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1 920
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2.07
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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SEMTECH
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36 637
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1.59
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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YJ
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35 828
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1.03
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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RUME
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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TRR ELECTRONICS
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286
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1.30
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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NEXPERIA
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39 596
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1.51
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BC857C |
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Транзистор PNP (Uce=45V, Ic=0.1A, P=300mW, B=420-800@I=2mA, f>250MHz, -55 to +150C)
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YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY CO
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16
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1.08
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2N6488 |
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Транзистор NPN 80V 15A 75W B:20-150
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104.00
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2N6488 |
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Транзистор NPN 80V 15A 75W B:20-150
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ON SEMICONDUCTOR
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2SA1124 |
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Транзистор S-P 150В 0.05A TO92
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MATSUSHITA
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2SA1127 |
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TOSHIBA
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2SA1242 |
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TOSHIBA
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2SA1534AS |
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MATSUSHITA
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2SA1767 |
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MATSUSHITA
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2SB1237 |
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Si-P, 40V, 1A, 1W, 150MHz
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ROHM
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2SB1326 |
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ROHM
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2SC2594 |
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Биполярный транзистор Si-N, 40V, 5A, 10W, 150MHz
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MATSUSHITA
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8
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43.47
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2SC2594 |
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Биполярный транзистор Si-N, 40V, 5A, 10W, 150MHz
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15.96
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2SC2594 |
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Биполярный транзистор Si-N, 40V, 5A, 10W, 150MHz
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Panasonic - SSG
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2SC2632 |
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MATSUSHITA
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2SC536 |
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SANYO
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2SC536 |
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NO TRADEMARK
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2SC536 |
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2SC536 |
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2SD1863 |
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2SD1992 |
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MATSUSHITA
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2SD1992 |
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MAT
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2SD1994AS |
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MATSUSHITA
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2SD2025 |
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Биполярный транзистор NPN Darl, 100V, 8A, 30W, B=1k-20k (Comp. 2SB1344)
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ROHM
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2SD2025 |
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Биполярный транзистор NPN Darl, 100V, 8A, 30W, B=1k-20k (Comp. 2SB1344)
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57.48
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2SD2025 |
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Биполярный транзистор NPN Darl, 100V, 8A, 30W, B=1k-20k (Comp. 2SB1344)
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Rohm Semiconductor
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BC557B.412 |
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NXP
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BC557C.112 |
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NXP
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BC857B.235 |
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NXP
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BC857B.235 |
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NEX-NXP
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MJ15024G |
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Транзистор NPN (Uce=250V, Ic=16A, P=250W, -65 to +150C).
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ON SEMICONDUCTOR
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MJ15024G |
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Транзистор NPN (Uce=250V, Ic=16A, P=250W, -65 to +150C).
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1
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529.20
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MJ15024G |
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Транзистор NPN (Uce=250V, Ic=16A, P=250W, -65 to +150C).
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ONS
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MJ15024G |
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Транзистор NPN (Uce=250V, Ic=16A, P=250W, -65 to +150C).
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ГЕРМАНИЯ
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MJ15024G |
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Транзистор NPN (Uce=250V, Ic=16A, P=250W, -65 to +150C).
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ON SEMICONDUCTO
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MJE15030G |
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Транзистор NPN, Тип монт. выводной, VCEO,В = 150, Ic = 8 Adc, Ptot,Вт = x, ft,МГц = 30
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ON SEMICONDUCTOR
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