| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| BAR42FILM | ST MICROELECTRONICS SEMI | 1 908 |
|
|||||
| BAR42FILM | STMicroelectronics |
|
|
|||||
| BAR42FILM |
|
|
||||||
| BAR43FILM | ST MICROELECTRONICS | 921 | 4.92 | |||||
| BAR43FILM | SGS |
|
|
|||||
| BAR43FILM | SGS THOMSON |
|
|
|||||
| BAR43FILM | ST MICROELECTRONICS SEMI | 4 096 |
|
|||||
| BAR43FILM | STMicroelectronics |
|
|
|||||
| BAR43FILM |
|
|
||||||
| BAR43FILM | ST MICROELECTRO |
|
|
|||||
| BAR43FILM | STMICROELECTR |
|
|
|||||
| BAR43FILM-E | ST MICROELECTRONICS |
|
|
|||||
| BAR43FILM-E | ST MICROELECTRONICS SEMI | 10 053 |
|
|||||
| BAS116 | NXP |
|
|
|||||
| BAS116 | 2 312 | 3.15 | ||||||
| BAS116 | NXP |
|
|
|||||
| BAS116 | KOME |
|
|
|||||
| BAS116 | SEMTECH | 317 | 3.14 | |||||
| BAS116 | Diodes Inc |
|
|
|||||
| BAS116 | INFINEON |
|
|
|||||
| BAS116 | YJ | 64 540 | 1.30 | |||||
| BAS116 | LGE |
|
|
|||||
| BAS116 | JSCJ | 15 571 | 1.32 | |||||
| BAS116E6327 | INFINEON |
|
|
|||||
| BAS116E6327 | INFINEON |
|
|
|||||
| BAS116E6327 |
|
|
||||||
| BAS116H | PHILIPS |
|
|
|||||
| BAS116H | NXP | 3 428 |
|
|||||
| BAS116H | PHILIPS |
|
|
|||||
| BAS116H | NXP |
|
|
|||||
| BAS116LT1 | ON SEMICONDUCTOR |
|
|
|||||
| BAS116LT1 | ON SEMICONDUCTOR | 602 |
|
|||||
| BAS116LT1G | ON SEMICONDUCTOR |
|
|
|||||
| BAS116LT1G | ON SEMICONDUCTOR |
|
|
|||||
| BAS116LT1G | ONS |
|
|
|||||
| BAS116LT1G |
|
|
||||||
| BAS16-7 | VISHAY |
|
|
|||||
| BAS16-7 | LITE ON OPTOELECTRONICS |
|
|
|||||
| BAS16-7 | DIODES |
|
|
|||||
| BAS16-7 | DIODES INC. | 161 |
|
|||||
| BAS16-7 | LITE ON OPTOELECTRONICS |
|
|
|||||
| BAS16-7 | VISHAY |
|
|
|||||
| BAS16-7 | Diodes Inc |
|
|
|||||
| BAS16-7-F | DIODES |
|
|
|||||
| BAS16-7-F | DI |
|
|
|||||
| BAS16-7-F | DIODES INC. |
|
|
|||||
| BAS16-7-F | Diodes Inc |
|
|
|||||
| BAS16-7-F | 1 475 | 5.28 | ||||||
| BAS16LT1G |
|
Импульсный диод (Vr=75V, If=200mA, P=300mW, Ts=-55.150C) | ON SEMICONDUCTOR |
|
|
|||
| BAS16LT1G |
|
Импульсный диод (Vr=75V, If=200mA, P=300mW, Ts=-55.150C) | ON SEMICONDUCTOR | 1 070 |
|
|
