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Vgs(th) (Max) @ Id | 4V @ 250µA |
Current - Continuous Drain (Id) @ 25° C | 75A |
Drain to Source Voltage (Vdss) | 55V |
Rds On (Max) @ Id, Vgs | 4.7 mOhm @ 104A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Gate Charge (Qg) @ Vgs | 230nC @ 10V |
Input Capacitance (Ciss) @ Vds | 5110pF @ 25V |
Power - Max | 330W |
Тип монтажа | Выводной |
Корпус (размер) | TO-220-3 |
Корпус | TO-220AB |
IRF2805PBF Automotive Mosfet
Производитель:
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