|
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 3.7 Ohm @ 1.1A, 10V |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25° C | 1.9A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 78nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1200pF @ 25V |
Power - Max | 35W |
Тип монтажа | Выводной |
Корпус (размер) | TO-220-3 Full Pack, Isolated |
Корпус | TO-220-3 |
IRFIBF30GPBF (MOSFET) HEXFET® Power MOSFET
Производитель:
|
|