![]() |
Gate Charge (Qg) @ Vgs | 58nC @ 4.5V |
Vgs(th) (Max) @ Id | 700mV @ 250µA |
Current - Continuous Drain (Id) @ 25° C | 61A |
Drain to Source Voltage (Vdss) | 20V |
Rds On (Max) @ Id, Vgs | 13 mOhm @ 37A, 7V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Input Capacitance (Ciss) @ Vds | 2500pF @ 15V |
Power - Max | 89W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
Корпус | D2PAK |
|
Корзина
|