|
Rds On (Max) @ Id, Vgs | 65 mOhm @ 3.1A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 3.1A |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) @ Vgs | 15.6nC @ 5V |
Input Capacitance (Ciss) @ Vds | 510pF @ 25V |
Power - Max | 1W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-261-4, TO-261AA |
Корпус | SOT-223 |
|