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FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 14A, 7V |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25° C | 14A |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) @ Vgs | 100nC @ 7V |
Input Capacitance (Ciss) @ Vds | 3520pF @ 25V |
Power - Max | 2.5W |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
Корпус | 8-SO |
IRF7484 (Дискретные сигналы) Hexfet Power Mosfet
Производитель:
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Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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MAX3232CSE-T | MAXIM |
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MAX3232CSE-T |
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MAX3232CSE-T | MAXIM | 8 |
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SN65LVDS1D | TEXAS INSTRUMENTS |
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SN65LVDS1D |
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300.00 | ||||||
SN65LVDS1D | TEXAS INSTRUMENTS |
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SN65LVDS1D | TEXAS |
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SN65LVDS1D | 4-7 НЕДЕЛЬ | 752 |
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SN65LVDS1DBV |
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278.40 | ||||||
SN65LVDS1DBV | TEXAS INSTRUMENTS | 8 | 105.84 | |||||
SN65LVDS1DBV | TEXAS INSTRUMENTS | 4 |
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SN65LVDS1DBV | 4-7 НЕДЕЛЬ | 71 |
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SN65LVDS1DBVR | TEXAS INSTRUMENTS | 75 | 134.32 | |||||
SN65LVDS1DBVR | TEXAS INSTRUMENTS | 110 |
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SN65LVDS1DBVR | TEXAS | 2 227 | 155.94 | |||||
SN65LVDS1DBVR |
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SN65LVDS1DBVR | 4-7 НЕДЕЛЬ | 433 |
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КЛЕММНИК 350-021-12 DEN | DEN |
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КЛЕММНИК 350-021-12 DEN | 12 | 19.20 | ||||||
КЛЕММНИК 350-021-12 DEN | DEGSON ELECTRONICS |
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КЛЕММНИК 350-021-12 DEN | КИТАЙ |
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Корзина
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