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DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A, 3V |
Current - Collector Cutoff (Max) | 500µA |
Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Current - Collector (Ic) (Max) | 4A |
Transistor Type | NPN - Darlington |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Power - Max | 40W |
Тип монтажа | Выводной |
Корпус (размер) | TO-126-3 |
Корпус | SOT-32-3 |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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2SD1266 |
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Биполярный транзистор NPN 60V, 3A, 35W, 30MHz | MATSUSHITA |
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2SD1266 |
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Биполярный транзистор NPN 60V, 3A, 35W, 30MHz | MAT |
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2SD1266 |
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Биполярный транзистор NPN 60V, 3A, 35W, 30MHz |
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52.68 | ||
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2SD1266 |
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Биполярный транзистор NPN 60V, 3A, 35W, 30MHz | PAN |
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2SD1266 |
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Биполярный транзистор NPN 60V, 3A, 35W, 30MHz | КИТАЙ |
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2SD1406Y | TOSHIBA | 40 | 71.82 | |||||
2SD1406Y |
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IRF7469PBF |
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International Rectifier |
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IRF7469PBF |
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INFINEON |
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IRF7469PBF |
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MMBD2836LT1 | ON SEMICONDUCTOR |
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MMBD2836LT1 | LESHAN RADIO COMPANY |
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MMBD2836LT1 | MOTOROLA |
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MMBD2836LT1 | FRS/MOT |
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MMBD2836LT1 | FRS |
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MMBD2836LT1 | 3 | 5.81 | |||||
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MMBD2836LT1 | LESHAN RADIO COMPANY, LTD |
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MMBD2836LT1 | MOTOROLA |
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MMBD2836LT1 | ON SEMICONDUCTOR |
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MMBD2836LT1 | ФИЛИППИНЫ |
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MMBD2836LT1 | ONS |
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MMBD7000 | NATIONAL SEMICONDUCTOR |
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MMBD7000 | NATIONAL SEMICONDUCTOR | 1 321 |
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MMBD7000 | MCC |
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MMBD7000 | Fairchild Semiconductor |
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MMBD7000 | FAIRCHILD |
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MMBD7000 | ONS |
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MMBD7000 |
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MMBD7000 | ONS-FAIR |
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MMBD7000 | JSCJ | 98 597 | 1.15 |
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Корзина
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