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FET Feature | Logic Level Gate |
FET Type | MOSFET P-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 120 mOhm @ 1A, 4.5V |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25° C | 1.52A |
Vgs(th) (Max) @ Id | 600mV @ 1mA |
Gate Charge (Qg) @ Vgs | 8.8nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 500pF @ 9.6V |
Power - Max | 417mW |
Тип монтажа | Поверхностный |
Корпус (размер) | SC-74, SOT-457 |
Корпус | 6-TSOP |
BSH207 (MOSFET) P-channel enhancement mode MOS transistor
Производитель:
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