MMUN2112LT1
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Версия для печати
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 22K |
| Resistor - Emitter Base (R2) (Ohms) | 22K |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Power - Max | 246mW |
| Тип монтажа | Поверхностный |
| Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
| Корпус | SOT-23-3 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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| MMUN2111LT1 | ON SEMICONDUCTOR |
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| MMUN2111LT1 | ON SEMICONDUCTOR | 979 |
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| MMUN2134LT1 | ON SEMICONDUCTOR |
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| MMUN2134LT1 | ON SEMICONDUCTOR |
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UC3842BD | MOTOROLA |
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UC3842BD | ON SEMICONDUCTOR |
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UC3842BD | MOTOROLA |
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UC3842BD | ON SEMICONDUCTOR | 535 |
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UC3842BD | ON SEMICONDUCTO |
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UC3842BD | 37 | 72.00 | |||||
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UC3842BD | 1 |
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| UC3842BD1013TR | ST MICROELECTRONICS | 4 896 | 26.76 | |||||
| UC3842BD1013TR | ST MICROELECTRONICS SEMI |
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| UC3842BD1013TR |
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| UC3842BD1013TR | STMicroelectronics |
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| UC3842BD1013TR | ST MICROELECTRO |
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