Voltage - Collector Emitter Breakdown (Max) | 50V, 40V |
Current - Collector (Ic) (Max) | 100mA, 500mA |
Transistor Type | 1 NPN Pre-Biased, 1 PNP |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Resistor - Base (R1) (Ohms) | 2.2K |
Resistor - Emitter Base (R2) (Ohms) | 2.2K |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V / 150 @ 100mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | 300MHz |
Power - Max | 300mW |
Тип монтажа | Поверхностный |
Корпус (размер) | SOT-666 |
Корпус | SOT-666 |