FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | TrenchMOS™ |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 13 mOhm @ 25A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 68.9A |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) @ Vgs | 9.6nC @ 5V |
Input Capacitance (Ciss) @ Vds | 920pF @ 25V |
Power - Max | 111W |
Тип монтажа | Выводной |
Корпус (размер) | TO-220-3 |
Корпус | TO-220AB |
PHP63NQ03LT (MOSFET) TrenchMOS (tm) logic level FET
Производитель:
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