ISL9R30120G2
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Версия для печати
| Current - Reverse Leakage @ Vr | 100µA @ 1200V |
| Current - Average Rectified (Io) | 30A |
| Voltage - DC Reverse (Vr) (Max) | 1200V (1.2kV) |
| Voltage - Forward (Vf) (Max) @ If | 3.3V @ 30A |
| Серия | Stealth™ |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Diode Type | Standard |
| Скорость | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 100ns |
| Тип монтажа | Through Hole, Radial |
| Корпус (размер) | TO-247-2 |
| Корпус | TO-247 |
| Product Change Notification | Lead Frame Change 20/Dec/2007 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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ISL9R30120G2 30A, 1200V StealthTM Diode
Производитель:
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
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FGH50N6S2D | FAIR |
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FGH50N6S2D |
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2 510.00 | |||||
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FGH50N6S2D | Fairchild Semiconductor |
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FGH50N6S2D | FAIRCHILD |
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FGH50N6S2D | ONS-FAIR |
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FGH50N6S2D | ONS |
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FQA8N100C |
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865.20 | ||
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FQA8N100C |
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1000v n-channel mosfet | FAIRCHILD |
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FQA8N100C |
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1000v n-channel mosfet | FAIRCHILD |
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FQA8N100C |
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1000v n-channel mosfet | Fairchild Semiconductor |
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FQA8N100C |
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1000v n-channel mosfet | ONS |
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HGTG27N120BN |
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72A/1200В N- | FAIR |
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HGTG27N120BN |
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72A/1200В N- | INTERSIL |
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HGTG27N120BN |
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72A/1200В N- | FSC |
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HGTG27N120BN |
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72A/1200В N- |
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2 400.00 | ||
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HGTG27N120BN |
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72A/1200В N- | INTERSIL |
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HGTG27N120BN |
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72A/1200В N- | Fairchild Semiconductor |
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HGTG27N120BN |
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72A/1200В N- | ONS |
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