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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAI/QTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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800
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11.34
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NATIONAL SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NXP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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PHILIPS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DC COMPONENTS
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11 087
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4.94
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FSC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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UTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DIOTEC
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7 054
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3.94
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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МИНСК
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIRCHILD
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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OTHER
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KEC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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5 600
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1.22
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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---
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NO TRADEMARK
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MULTICOMP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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HOTTECH
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1 234
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1.83
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KLS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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КИТАЙ
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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CHINA
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9 600
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1.23
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ZH
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793 P-1C-C 24VDC |
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SONGCHU
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DD-12HWB |
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Линейная шкала, 12 красных сегментов, 1.4мКд
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KB
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DD-12HWB |
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Линейная шкала, 12 красных сегментов, 1.4мКд
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KINGBRIGHT
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DD-12HWB |
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Линейная шкала, 12 красных сегментов, 1.4мКд
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3
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52.79
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DD-12HWB |
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Линейная шкала, 12 красных сегментов, 1.4мКд
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КИТАЙ
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MJE340 |
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Транзистор биполярный средней мощности NPN (Uce=300V, Ic=500mA, P=20W, B=30-240, -65 ...
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ON SEMICONDUCTOR
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MJE340 |
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Транзистор биполярный средней мощности NPN (Uce=300V, Ic=500mA, P=20W, B=30-240, -65 ...
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FAIR
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MJE340 |
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Транзистор биполярный средней мощности NPN (Uce=300V, Ic=500mA, P=20W, B=30-240, -65 ...
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MOTOROLA
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MJE340 |
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Транзистор биполярный средней мощности NPN (Uce=300V, Ic=500mA, P=20W, B=30-240, -65 ...
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ST MICROELECTRONICS
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888
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50.46
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MJE340 |
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Транзистор биполярный средней мощности NPN (Uce=300V, Ic=500mA, P=20W, B=30-240, -65 ...
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FAIRCHILD
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MJE340 |
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Транзистор биполярный средней мощности NPN (Uce=300V, Ic=500mA, P=20W, B=30-240, -65 ...
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FAIRCHILD
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MJE340 |
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Транзистор биполярный средней мощности NPN (Uce=300V, Ic=500mA, P=20W, B=30-240, -65 ...
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MOTOROLA
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MJE340 |
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Транзистор биполярный средней мощности NPN (Uce=300V, Ic=500mA, P=20W, B=30-240, -65 ...
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ST MICROELECTRONICS SEMI
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MJE340 |
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Транзистор биполярный средней мощности NPN (Uce=300V, Ic=500mA, P=20W, B=30-240, -65 ...
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STMicroelectronics
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MJE340 |
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Транзистор биполярный средней мощности NPN (Uce=300V, Ic=500mA, P=20W, B=30-240, -65 ...
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ON SEMICONDUCTOR
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MJE340 |
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Транзистор биполярный средней мощности NPN (Uce=300V, Ic=500mA, P=20W, B=30-240, -65 ...
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МАРОККО
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MJE340 |
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Транзистор биполярный средней мощности NPN (Uce=300V, Ic=500mA, P=20W, B=30-240, -65 ...
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ON SEMIC
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MJE340 |
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Транзистор биполярный средней мощности NPN (Uce=300V, Ic=500mA, P=20W, B=30-240, -65 ...
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ИНДИЯ
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MJE340 |
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Транзистор биполярный средней мощности NPN (Uce=300V, Ic=500mA, P=20W, B=30-240, -65 ...
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ST MICROELECTRO
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MJE340 |
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Транзистор биполярный средней мощности NPN (Uce=300V, Ic=500mA, P=20W, B=30-240, -65 ...
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STMICROELECTR
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MJE340 |
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Транзистор биполярный средней мощности NPN (Uce=300V, Ic=500mA, P=20W, B=30-240, -65 ...
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24.72
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RLB1314-221KL |
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Индуктивность с радиальными выводами 220мкГн, 10%, 680мА
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46.00
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RLB1314-221KL |
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Индуктивность с радиальными выводами 220мкГн, 10%, 680мА
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BOURNS
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1 061
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54.16
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