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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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32768 HZ(2X6MM) |
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ТАЙВАНЬ(КИТАЙ)
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FYLS-0805UBC |
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FORYARD
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105 062
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4.07
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FYLS-0805UBC |
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ON SEMICONDUCTOR
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12
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2.78
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ONS
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2 320
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7.87
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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7.20
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ON SEMICONDUCTOR
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1 003
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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GALAXY
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ON SEMICONDUCTO
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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ONSEMICONDUCTOR
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MMBTA92LT1G |
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Транзистор PNP (Uce=300V, Ic=500mA, P=225mW, B>40@I=10mA, f=50MHz, -55 to +150C)
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0.00
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RC1206JR-0718K |
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Чип-резистор 0.125/0.25Вт,1206,5%, 18 К
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PHYCOMP
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RC1206JR-0718K |
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Чип-резистор 0.125/0.25Вт,1206,5%, 18 К
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YAGEO
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RC1206JR-0718K |
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Чип-резистор 0.125/0.25Вт,1206,5%, 18 К
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PHYCOMP
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RC1206JR-0718K |
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Чип-резистор 0.125/0.25Вт,1206,5%, 18 К
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YAGEO
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UF4004 (1A 400В) |
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