Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 50mA |
Voltage - Collector Emitter Breakdown (Max) | 120V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 6V |
Power - Max | 500mW |
Frequency - Transition | 100MHz |
Тип монтажа | Выводной |
Корпус (размер) | TO-226-3, TO-92-3 (TO-226AA) |
Корпус | TO-92-3 |
Product Change Notification | Fe Wire Change 12/Oct/2007 |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
2SB1560 | Транзистор S-P-DAR 10A 160В TO3P | SK | ||||||
2SB1560 | Транзистор S-P-DAR 10A 160В TO3P | SANKEN | ||||||
2SB1560 | Транзистор S-P-DAR 10A 160В TO3P | 244.00 | ||||||
2SB1560 | Транзистор S-P-DAR 10A 160В TO3P | КИТАЙ | ||||||
2SB1560 | Транзистор S-P-DAR 10A 160В TO3P | ISCSEMI | ||||||
2SC3964 | TOSHIBA | |||||||
2SC3964 | 75.60 | |||||||
2SC3964 | TOS | |||||||
2SD2390 | NPN Hi-Fi, Darl 150V, 10A, 100W, 55MHz, B>5000 (Comp. 2SB1560) | SANKEN | ||||||
2SD2390 | NPN Hi-Fi, Darl 150V, 10A, 100W, 55MHz, B>5000 (Comp. 2SB1560) | SK | ||||||
2SD2390 | NPN Hi-Fi, Darl 150V, 10A, 100W, 55MHz, B>5000 (Comp. 2SB1560) | 248.40 | ||||||
2SD2390 | NPN Hi-Fi, Darl 150V, 10A, 100W, 55MHz, B>5000 (Comp. 2SB1560) | КИТАЙ | ||||||
2SD2390 | NPN Hi-Fi, Darl 150V, 10A, 100W, 55MHz, B>5000 (Comp. 2SB1560) | ISCSEMI | ||||||
HZS3C3TD | HITACHI SEMICONDUCTOR | |||||||
HZS3C3TD | HITACHI SEMICONDUCTOR | |||||||
KTC3200 | NPN 120V, 0.1A, 625mW, 100MHz (Comp. KTA1268) | KEC | ||||||
KTC3200 | NPN 120V, 0.1A, 625mW, 100MHz (Comp. KTA1268) | 8 | 15.84 | |||||
KTC3200 | NPN 120V, 0.1A, 625mW, 100MHz (Comp. KTA1268) | КИТАЙ |
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