SI4925BDY
Транзистор PMOSFET Dual 30в -7.1/-5.5A
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Версия для печати
| Серия | TrenchFET® |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 7.1A, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 5.3A |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) @ Vgs | 50nC @ 10V |
| Power - Max | 1.1W |
| Тип монтажа | Поверхностный |
| Корпус (размер) | 8-SOIC (0.154", 3.90mm Width) |
| Корпус | 8-SOICN |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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Si4925BDY (MOSFET) Dual P-Channel 30-V (D-S) MOSFET
Производитель:
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
|---|---|---|---|---|---|---|---|---|
| AMC1117-1.8SKFT | ADD MICROTECH CORPORATION |
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| AMC1117-1.8SKFT | ADD MICROTECH CORPORATION |
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| AMC1117-3.3SKT | ADD MICROTECH CORPORATION |
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| AMC1117-3.3SKT | ADD MICROTECH CORPORATION | 666 |
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| AMC1117-3.3SKT |
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