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FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 800 mOhm @ 3.1A, 10V |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 5.2A |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) @ Vgs | 16nC @ 5V |
Input Capacitance (Ciss) @ Vds | 360pF @ 25V |
Power - Max | 3.1W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
Корпус | D2PAK |
IRL620S (MOSFET) HEXFET® Power MOSFET
Производитель:
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