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Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Серия | SIPMOS® |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 90 mOhm @ 2.6A, 10V |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 2.6A |
Vgs(th) (Max) @ Id | 2V @ 20µA |
Gate Charge (Qg) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) @ Vds | 380pF @ 25V |
Power - Max | 1.8W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-261-4, TO-261AA |
Корпус | PG-SOT223-4 |
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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2SK3562 |
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Транзистор полевой MOSFET, N-канал, 600В, 6A, 40 Bт | TOSHIBA |
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2SK3562 |
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Транзистор полевой MOSFET, N-канал, 600В, 6A, 40 Bт | 1 | 300.00 | ||
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2SK3562 |
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Транзистор полевой MOSFET, N-канал, 600В, 6A, 40 Bт | TOS |
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2SK3562 |
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Транзистор полевой MOSFET, N-канал, 600В, 6A, 40 Bт | ГЕРМАНИЯ |
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BSP171PE6327 | INFINEON |
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BSP171PE6327 | Infineon Technologies |
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BTS452R | INFINEON |
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BTS452R |
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192.00 | |||||
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BTS452R | Infineon Technologies |
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BTS452R | INFINEON TECH |
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SM8S36A-E3/2D | VISHAY |
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SM8S36A-E3/2D | Vishay/General Semiconductor |
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SM8S36A-E3/2D |
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115.20 | ||||||
SM8S36A-E3/2D | GENERAL SEMICONDUCTOR | 10 |
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SPP80N06S2-07 | INFINEON |
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SPP80N06S2-07 |
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160.00 | |||||
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SPP80N06S2-07 | Infineon Technologies |
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Корзина
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