Current - Continuous Drain (Id) @ 25° C | 190A |
Drain to Source Voltage (Vdss) | 100V |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 110A, 10V |
FET Feature | Standard |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 230nC @ 10V |
Input Capacitance (Ciss) @ Vds | 9830pF @ 50V |
Power - Max | 380W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-263-7, D²Pak (6 leads + Tab), TO-263CB |
Корпус | D2PAK |
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