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FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 11A, 10V |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 18A |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) @ Vgs | 15nC @ 5V |
Input Capacitance (Ciss) @ Vds | 480pF @ 25V |
Power - Max | 3.8W |
Тип монтажа | Выводной |
Корпус (размер) | TO-262-3 (Straight Leads) |
Корпус | TO-262 |
IRLZ24N (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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