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FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 750 mOhm @ 5.5A, 10V |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 9.2A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 49nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1400pF @ 25V |
Power - Max | 170W |
Тип монтажа | Выводной |
Корпус (размер) | TO-262-3 Long Leads, I²Pak, TO-262AA |
Корпус | TO-262-3 |
IRFSL9N60A (MOSFET) HEXFET® Power MOSFET
Производитель:
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Корзина
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