FQPF6N60C
Транзистор N-канальный MOSFET 600V, 5.5A, 40W
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Версия для печати
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Серия | QFET™ |
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Rds On (Max) @ Id, Vgs | 2 Ohm @ 2.75A, 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 5.5A |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 810pF @ 25V |
| Power - Max | 40W |
| Тип монтажа | Выводной |
| Корпус (размер) | TO-220-3 Full Pack |
| Корпус | TO-220F |
| Product Change Notification | Design/Process Change Notification 26/June/2007 |
* Представленная техническая информация носит справочный характер и не
предназначена для использования в конструкторской документации.
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FQPF6N60C (MOSFET) 600V N-Channel MOSFET
Производитель:
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С этим товаром покупают:
| Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
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1N4007 |
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DC COMPONENTS | 95 233 | 2.00 | ||
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1N4007 |
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GENERAL SEMICONDUCTOR |
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LITE ON OPTOELECTRONICS |
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PANJIT |
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FSC |
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MCC |
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DIC |
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FAIR |
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PHILIPS |
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1N4007 |
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MIC | 285 752 | 1.40 | ||
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1N4007 |
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DIOTEC | 77 582 | 3.15 | ||
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ON SEMICONDUCTOR |
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LD |
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JGD |
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MING SHUN |
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MS |
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DC COMPONENTS |
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FAIRCHILD | 288 |
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GENERAL SEMICONDUCTOR | 1 |
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LITE ON OPTOELECTRONICS |
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MASTER INSTRUMENT CORPORATION |
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MICRO SEMICONDUCTOR(MICROSEMI) |
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1N4007 |
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ON SEMICONDUCTOR |
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PANJIT | 307 692 |
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PHILIPS |
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TAIWAN SEMICONDUCTOR MANF. |
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YANGJIE SEMICONDUCT |
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Fairchild Semiconductor |
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD |
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MICROSEMI CORP |
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ТАЙВАНЬ(КИТАЙ) |
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GD |
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JC |
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KINGTRONICS |
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YJ | 351 720 | 1.61 | ||
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RECTIFIER |
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EXTRA COM-NTS |
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ТОМИЛИНО |
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EXTRA |
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КИТАЙ | 800 | 6.12 | ||
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DIOTEC SEMICONDUCTOR |
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MD |
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211 005 |
1.92 >100 шт. 0.96 |
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ONS-FAIR |
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ONS |
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KLS | 35 200 | 2.95 | ||
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MC |
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CHINA | 15 317 | 1.02 | ||
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SUNRISETRON |
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UNKNOWN |
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BILIN |
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KEHE |
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BL |
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SUNTAN | 74 050 | 2.20 | ||
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TWGMC | 76 960 |
1.08 >100 шт. 0.54 |
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CTK |
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JUXING | 125 | 2.50 | ||
| 2SC6090 |
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NPN hi-res, 1500V, 10A, 35W, Tf<200nS | SANYO |
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| 2SC6090 |
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NPN hi-res, 1500V, 10A, 35W, Tf<200nS | SAN |
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| 2SC6090 |
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NPN hi-res, 1500V, 10A, 35W, Tf<200nS | КИТАЙ |
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| 2SC6090 |
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NPN hi-res, 1500V, 10A, 35W, Tf<200nS | 2 | 190.80 | ||||
| 2SC6090 |
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NPN hi-res, 1500V, 10A, 35W, Tf<200nS | ISC | 101 | 148.61 | |||
| 2SC6090 |
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NPN hi-res, 1500V, 10A, 35W, Tf<200nS | ISCSEMI |
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| FSFR1700 | FSC |
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| FSFR1700 |
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1 560.00 | ||||||
| FSFR1700 | FAIR |
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| FSFR1700 | FAIRCHILD |
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| FSFR1700 | FAIRCHILD |
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| FSFR1700 | Fairchild Semiconductor |
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| FSFR1700 | FSC1 |
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| FSFR1700 | ONS |
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| SG6848TZ |
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SGC |
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| SG6848TZ |
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FSC1 |
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| SG6848TZ |
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FSC |
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| SG6848TZ |
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ONS |
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| SG6848TZ |
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TDA4605-3 |
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SMPS упpавление N-MOS/MOSFET, Fmax=250 kHz | INFINEON | 1 | 78.72 | |
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TDA4605-3 |
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SMPS упpавление N-MOS/MOSFET, Fmax=250 kHz | INTERSIL |
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TDA4605-3 |
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SMPS упpавление N-MOS/MOSFET, Fmax=250 kHz |
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TDA4605-3 |
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SMPS упpавление N-MOS/MOSFET, Fmax=250 kHz | INTERNATIONAL RECTIFIER |
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TDA4605-3 |
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SMPS упpавление N-MOS/MOSFET, Fmax=250 kHz | INFINEON |
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TDA4605-3 |
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SMPS упpавление N-MOS/MOSFET, Fmax=250 kHz | INTERSIL |
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TDA4605-3 |
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SMPS упpавление N-MOS/MOSFET, Fmax=250 kHz | Infineon Technologies |
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TDA4605-3 |
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SMPS упpавление N-MOS/MOSFET, Fmax=250 kHz | КИТАЙ |
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