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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAI/QTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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800
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15.30
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NATIONAL SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NXP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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PHILIPS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DC COMPONENTS
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7 947
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6.27
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FSC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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UTC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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DIOTEC
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4 577
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3.63
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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МИНСК
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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FAIRCHILD
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MOTOROLA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ON SEMICONDUCTOR
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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OTHER
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KEC
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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24 000
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1.36
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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TOSHIBA
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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---
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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NO TRADEMARK
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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MULTICOMP
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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HOTTECH
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3 209
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2.17
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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KLS
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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КИТАЙ
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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CHINA
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9 600
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1.43
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2N5551 |
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Транзистор NPN (Uce=180V, Ic=0.3A, P=630mW, B=80-250@I=10mA, f>100MHz, -65 to +150C)
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ZH
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2SA1013 |
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Биполярный транзистор PNP 160V, 1A, 0.9W, 15MHz
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TOSHIBA
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2SA1013 |
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Биполярный транзистор PNP 160V, 1A, 0.9W, 15MHz
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FAIR
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2SA1013 |
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Биполярный транзистор PNP 160V, 1A, 0.9W, 15MHz
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13.32
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2SA1013 |
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Биполярный транзистор PNP 160V, 1A, 0.9W, 15MHz
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TOS
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2SA1013 |
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Биполярный транзистор PNP 160V, 1A, 0.9W, 15MHz
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ON SEMI/FAIRCH
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2SA1013 |
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Биполярный транзистор PNP 160V, 1A, 0.9W, 15MHz
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ONSEMICONDUCTOR
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2SA1013 |
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Биполярный транзистор PNP 160V, 1A, 0.9W, 15MHz
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JCET
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2SA1013 |
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Биполярный транзистор PNP 160V, 1A, 0.9W, 15MHz
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ONS
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W
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FUJI ELECTRIC
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80
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311.10
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W
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FUJITSU
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W
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131.80
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W
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FUJ
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W
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FUJI
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W
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КИТАЙ
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W
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ISCSEMI
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2SC2625 |
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Биполярный транзистор Si-N, 450/400V, 10A, 80W
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INCHANGE
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128
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515.34
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6A10 |
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(P600M) диод 6А, 1000В
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CHINA
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6A10 |
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(P600M) диод 6А, 1000В
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MIC
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4 084
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7.13
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6A10 |
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(P600M) диод 6А, 1000В
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DC COMPONENTS
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4 788
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10.65
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6A10 |
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(P600M) диод 6А, 1000В
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24 240
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7.46
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6A10 |
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(P600M) диод 6А, 1000В
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Micro Commercial Co
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6A10 |
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(P600M) диод 6А, 1000В
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ТАЙВАНЬ(КИТАЙ)
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6A10 |
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(P600M) диод 6А, 1000В
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GALAXY
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6A10 |
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(P600M) диод 6А, 1000В
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KINGTRONICS
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6A10 |
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(P600M) диод 6А, 1000В
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КИТАЙ
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400
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33.15
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6A10 |
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(P600M) диод 6А, 1000В
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YJ
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6A10 |
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(P600M) диод 6А, 1000В
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LGE
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104
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10.82
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6A10 |
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(P600M) диод 6А, 1000В
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SUNTAN
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451
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15.62
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6A10 |
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(P600M) диод 6А, 1000В
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WUXI XUYANG
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6A10 |
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(P600M) диод 6А, 1000В
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YANGJIE
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1 760
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13.25
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6A10 |
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(P600M) диод 6А, 1000В
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YANGJIE (YJ)
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6A10 |
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(P600M) диод 6А, 1000В
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KOME
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6A10 |
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(P600M) диод 6А, 1000В
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TRR
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MJE13005 |
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Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
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ON SEMICONDUCTOR
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MJE13005 |
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Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
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ST MICROELECTRONICS
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MJE13005 |
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Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
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8
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56.32
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MJE13005 |
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Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
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ONS
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MJE13005 |
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Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
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ON SEMICONDUCTOR
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MJE13005 |
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Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
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ST MICROELECTRONICS SEMI
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MJE13005 |
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Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
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INCHANGE SEMIC
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MJE13005 |
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Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
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MOTOROLA
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MJE13005 |
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Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
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HOTTECH
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MJE13005 |
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Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
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ZH
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MJE13005 |
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Транзистор биполярный большой мощности (Uce=400V/700V, Ic=4A, P=75W, B=10-80, -65 to ...
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RUME
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7 360
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14.74
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