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FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 11A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 11A |
Vgs(th) (Max) @ Id | 2.35V @ 25µA |
Gate Charge (Qg) @ Vgs | 12nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 1140pF @ 15V |
Power - Max | 1.7W |
Тип монтажа | Поверхностный |
Корпус (размер) | DirectFET™ Isometric S1 |
Корпус | DIRECTFET S1 |
IRF6720S2TRPBF (MOSFET) N-Channel HEXFET Power MOSFET
Производитель:
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Корзина
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