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FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
FET Feature | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 7 mOhm @ 64A, 7V |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 110A |
Vgs(th) (Max) @ Id | 700mV @ 250µA |
Gate Charge (Qg) @ Vgs | 110nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 4700pF @ 15V |
Power - Max | 140W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
Корпус | D2PAK |
IRL3502S (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
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