![]() |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Rds On (Max) @ Id, Vgs | 550 mOhm @ 3.2A, 10V |
Drain to Source Voltage (Vdss) | 400V |
Current - Continuous Drain (Id) @ 25° C | 5.4A |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) @ Vgs | 66nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1200pF @ 25V |
Power - Max | 40W |
Тип монтажа | Выводной |
Корпус (размер) | TO-220-3 Full Pack, Isolated |
Корпус | TO-220-3 |
IRFI740GPBF (MOSFET) HEXFET® Power MOSFET
Производитель:
|
Наименование | Описание | Производитель | Количество | Цена, руб. | Купить | |||
---|---|---|---|---|---|---|---|---|
![]() |
![]() |
1206-X7R-1.0UF 10% 25V |
![]() |
Керамический конденсатор 1206, X7R, 10%,1.0 мкФ, 25 В | KOME |
![]() |
![]() |
|
![]() |
![]() |
1206-X7R-1.0UF 10% 25V |
![]() |
Керамический конденсатор 1206, X7R, 10%,1.0 мкФ, 25 В |
![]() |
7.32 | ||
LR8K4-G |
![]() |
Регулируемый (Vout=1.2-438V, tol=5%, Iout=0.01A, Uin=13.2-450V) | SUP |
![]() |
![]() |
|||
LR8K4-G |
![]() |
Регулируемый (Vout=1.2-438V, tol=5%, Iout=0.01A, Uin=13.2-450V) | SUPERTEX |
![]() |
![]() |
|||
LR8K4-G |
![]() |
Регулируемый (Vout=1.2-438V, tol=5%, Iout=0.01A, Uin=13.2-450V) | 1 155 | 232.37 | ||||
LR8K4-G |
![]() |
Регулируемый (Vout=1.2-438V, tol=5%, Iout=0.01A, Uin=13.2-450V) | MICRO CHIP |
![]() |
![]() |
|||
LR8K4-G |
![]() |
Регулируемый (Vout=1.2-438V, tol=5%, Iout=0.01A, Uin=13.2-450V) | SI |
![]() |
![]() |
|||
TL081CDR |
![]() |
1xOP JFET +-18V 13V/us | TEXAS INSTRUMENTS |
![]() |
![]() |
|||
TL081CDR |
![]() |
1xOP JFET +-18V 13V/us | TEXAS INSTRUMENTS |
![]() |
![]() |
|||
TL081CDR |
![]() |
1xOP JFET +-18V 13V/us | TEXAS |
![]() |
![]() |
|||
TL081CDR |
![]() |
1xOP JFET +-18V 13V/us |
![]() |
![]() |
|
Корзина
|