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FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 62A, 10V |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25° C | 104A |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) @ Vgs | 68nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 3445pF @ 25V |
Power - Max | 2.4W |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-263-3, D²Pak (2 leads + Tab), TO-263AB |
Корпус | D2PAK |
IRL1104S (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
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