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FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Rds On (Max) @ Id, Vgs | 19 mOhm @ 33A, 10V |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 55A |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) @ Vgs | 50nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 1600pF @ 25V |
Power - Max | 107W |
Тип монтажа | Выводной |
Корпус (размер) | TO-251-3 Long Leads, IPak, TO-251AB |
Корпус | I-Pak |
IRLU3103 (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
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