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Gate Charge (Qg) @ Vgs | 46.5nC @ 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Current - Continuous Drain (Id) @ 25° C | 11A |
Drain to Source Voltage (Vdss) | 30V |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 20A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) @ Vds | 3111pF @ 15V |
Power - Max | 850mW |
Тип монтажа | Поверхностный |
Корпус (размер) | 8-WDFN Exposed Pad |
Корпус | 8-WDFN |
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Корзина
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