![]() |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 110A, 10V |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25° C | 185A |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) @ Vgs | 140nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 7660pF @ 25V |
Power - Max | 300W |
Тип монтажа | Выводной |
Корпус (размер) | Super-220™-3 (Straight Leads) |
Корпус | SUPER-220™ (TO-273AA) |
IRLBA1304P (MOSFET) HEXFET Power MOSFETs Discrete N-Channel
Производитель:
|
|
Корзина
|