Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Voltage - Forward (Vf) (Max) @ If | 1.1V @ 50mA |
Current - Reverse Leakage @ Vr | 5nA @ 75V |
Current - Average Rectified (Io) (per Diode) | 140mA (DC) |
Voltage - DC Reverse (Vr) (Max) | 85V |
Reverse Recovery Time (trr) | 3µs |
Diode Type | Standard |
Скорость | Small Signal =< 200mA (Io), Any Speed |
Diode Configuration | 1 Pair Series Connection |
Тип монтажа | Поверхностный |
Корпус (размер) | TO-236-3, SC-59, SOT-23-3 |
Корпус | SOT-23-3 |
Product Change Notification | Encapsulate Change 15/May/2008 |
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Наименование
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Описание
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Производитель
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Количество
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Цена, руб.
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Купить
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ATMEGA16-8AC |
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ATMEL
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ATMEGA16-8AC |
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ATMEGA16-8AC |
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ATTINY2313-20SU |
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8- бит AVR RISC микроконтроллер 2K ISP Flash, 128 bytes EEPROM, 128 bytes SRAM, 18 I/O ...
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ATMEL
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1 674
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300.00
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ATTINY2313-20SU |
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8- бит AVR RISC микроконтроллер 2K ISP Flash, 128 bytes EEPROM, 128 bytes SRAM, 18 I/O ...
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244
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299.20
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ATTINY2313-20SU |
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8- бит AVR RISC микроконтроллер 2K ISP Flash, 128 bytes EEPROM, 128 bytes SRAM, 18 I/O ...
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ATMEL CORPORATION
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ATTINY2313-20SU |
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8- бит AVR RISC микроконтроллер 2K ISP Flash, 128 bytes EEPROM, 128 bytes SRAM, 18 I/O ...
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США
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ATTINY2313-20SU |
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8- бит AVR RISC микроконтроллер 2K ISP Flash, 128 bytes EEPROM, 128 bytes SRAM, 18 I/O ...
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СОЕДИНЕННЫЕ ШТА
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ATTINY2313-20SU |
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8- бит AVR RISC микроконтроллер 2K ISP Flash, 128 bytes EEPROM, 128 bytes SRAM, 18 I/O ...
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MICRO CHIP
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600
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629.76
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ATTINY2313-20SU |
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8- бит AVR RISC микроконтроллер 2K ISP Flash, 128 bytes EEPROM, 128 bytes SRAM, 18 I/O ...
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MICRO CHIP
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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NXP
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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1 104
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2.45
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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ON SEMICONDUCTOR
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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GALAXY
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5 333
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2.50
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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ONS
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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NXP
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3 888
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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Diodes Inc
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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КИТАЙ
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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DI
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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DC COMPONENTS
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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INFINEON
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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DIODES
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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DIOTEC
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23 728
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2.96
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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SHENZHEN LUGUANG ELECTRONIC TECHNOLOGY CO.,LTD
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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ONSEMICONDUCTOR
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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GALAXY ME
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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INFINEON
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102
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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LRC
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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HOTTECH
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12 000
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1.28
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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PANJIT
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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SEMTECH
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66
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3.44
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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WUXI XUYANG
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52
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3.02
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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SEMICRON
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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KOME
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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NXP/NEXPERIA
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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YANGJIE (YJ)
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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JSCJ
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77 976
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1.93
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BAV199 |
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2 импульсных диода (Vrrm=85V, Vr=75V, If=160mA, Ifrm=500mA, P=250mW, Ts=-65 to +150C)
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YJ
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115 788
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1.97
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BC817 |
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Биполярный транзистор 50В, 0,5А, 200МГц
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NXP
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BC817 |
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Биполярный транзистор 50В, 0,5А, 200МГц
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PHILIPS
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BC817 |
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Биполярный транзистор 50В, 0,5А, 200МГц
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4.20
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BC817 |
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Биполярный транзистор 50В, 0,5А, 200МГц
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KEMET
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BC817 |
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Биполярный транзистор 50В, 0,5А, 200МГц
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NXP
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626
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BC817 |
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Биполярный транзистор 50В, 0,5А, 200МГц
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PHILIPS
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18 448
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BC817 |
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Биполярный транзистор 50В, 0,5А, 200МГц
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HOTTECH
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BC817 |
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Биполярный транзистор 50В, 0,5А, 200МГц
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JSCJ
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453 097
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1.55
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LMX2306TMX |
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NATIONAL SEMICONDUCTOR
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LMX2306TMX |
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555.60
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LMX2306TMX |
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NSC
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LMX2306TMX |
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TEXAS INSTRUMENTS
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LMX2306TMX |
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NATIONAL SEMICONDUCTOR
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94
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