Power - Max | 330W |
Input Capacitance (Ciss) @ Vds | 5730pF @ 25V |
Gate Charge (Qg) @ Vgs | 200nC @ 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Current - Continuous Drain (Id) @ 25° C | 75A |
Drain to Source Voltage (Vdss) | 30V |
Rds On (Max) @ Id, Vgs | 3.3 mOhm @ 140A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Тип монтажа | Выводной |
Корпус (размер) | TO-220-3 |
Корпус | TO-220AB |
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