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Current - Continuous Drain (Id) @ 25° C | 23A |
Drain to Source Voltage (Vdss) | 40V |
Rds On (Max) @ Id, Vgs | 3.4 mOhm @ 23A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Vgs(th) (Max) @ Id | 2.25V @ 250µA |
Gate Charge (Qg) @ Vgs | 63nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 5950pF @ 15V |
Power - Max | 2.8W |
Тип монтажа | Поверхностный |
Корпус (размер) | DirectFET™ Isometric MT |
Корпус | DIRECTFET™ MT |
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Корзина
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