![]() |
Gate Charge (Qg) @ Vgs | 53nC @ 4.5V |
Vgs(th) (Max) @ Id | 2.35V @ 100µA |
Current - Continuous Drain (Id) @ 25° C | 32A |
Drain to Source Voltage (Vdss) | 25V |
Rds On (Max) @ Id, Vgs | 1.8 mOhm @ 32A, 10V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Серия | HEXFET® |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) @ Vds | 4280pF @ 13V |
Power - Max | 2.8W |
Тип монтажа | Поверхностный |
Корпус (размер) | DirectFET™ Isometric MX |
Корпус | DIRECTFET™ MX |
|
Корзина
|